Small Plasma Cleaner "KNPC-1"
12-inch wafer processing with ring attachment is possible! Surface modification, removal of inorganic/organic contamination! Ideal for evaluation and research before mass production! High speed, low cost.
★ 12-inch wafer processing with ring attachment is possible! ★ Surface modification, removal of inorganic/organic contamination! ★ Ideal for evaluation and research before mass production! ★ High speed, low cost ★ Various optional features ★ Compatible with 300mm wafers and rectangular substrates [Main Performance] - Achievable pressure: 6.0 Pa or lower (when gas ballast is closed) * Uses a dry pump with a maximum exhaust speed of 500 L/min - Leak rate: 1.07 Pa/min or lower * Build-up standard value: Converted to chamber volume as 0.1 Pa·L/sec - RF power control: 13.56 MHz / 100 to 1,000 W - Process gas flow control: Within ±10% of the set value - Etching performance Inorganic etching rate: Average of 20 nm/min or more ±20% Organic etching rate: Average of 500 nm/min or more ±20% Test chips placed at 5 points on a φ300 electrode * Placed at 4 points on the φ280 circumference and 1 point in the center * When using rectangular electrodes [optional], placed at 4 points on the corners of a 300 mm square and 1 point in the center Wide-range auto-tuning
- Company：KNE
- Price：Other
